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Phys. Rev. E 67, 036202 (2003) [8 pages]

Free-boundary problems describing two-dimensional pulse recycling and motion in semiconductors

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L. L. Bonilla*
Departamento de Matemáticas, Universidad Carlos III de Madrid, Avenida Universidad 30, E-28911 Leganés, Spain

R. Escobedo
MIRIAM (Milan Research Center for Industrial and Applied Mathematics) Dipartimento di Matematica, Università di Milano, Via Saldini 50, Milano 20133, Italy

F. J. Higuera
ETS Ingenieros Aeronáuticos, Universidad Politécnica de Madrid, Plaza Cardenal Cisneros 3, Madrid 28040, Spain

Received 8 November 2002; published 10 March 2003

An asymptotic analysis of the Gunn effect in two-dimensional samples of bulk n GaAs with circular contacts is presented. A moving pulse far from contacts is approximated by a moving free boundary separating regions where the electric potential solves a Laplace equation with subsidiary boundary conditions. The dynamical condition for the motion of the free boundary is a Hamilton-Jacobi equation. We obtain the exact solution of the free-boundary problem (FBP) in simple one-dimensional and axisymmetric geometries. The solution of the FBP is obtained numerically in the general case and compared with the numerical solution of the full system of equations. The agreement is excellent so that the FBP can be adopted as the basis for an asymptotic study of the multidimensional Gunn effect.

© 2003 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevE.67.036202
DOI:
10.1103/PhysRevE.67.036202
PACS:
05.45.-a, 47.54.+r, 73.50.Fq, 82.40.Bj

*Also at Unidad Asociada al Instituto de Ciencia de Materiales (CSIC), 28049 Cantoblanco, Spain. Email address: bonilla@ing.uc3m.es

Email address: escobedo@math.uc3m.es

Email address: higuera@dmt.upm.es