corner
corner

Phys. Rev. E 63, 066207 (2001) [8 pages]

Dynamic scenarios of multistable switching in semiconductor superlattices

Download: PDF (298 kB) Buy this article Export: BibTeX or EndNote (RIS)

A. Amann1, A. Wacker1, L. L. Bonilla2, and E. Schöll1,3
1Institut für Theoretische Physik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
2Escuela Politécnica Superior, Universidad Carlos III, Avenida de la Universidad 30, 28911 Leganés, Spain
3Department of Physics, Duke University, Durham, North Carolina 27708-0305

Received 19 December 2000; published 16 May 2001

We analyze the dynamics of charge distributions in weakly coupled, doped, dc voltage biased semiconductor superlattices subject to voltage steps of different sizes. Qualitatively different current responses to voltage switching processes have been observed experimentally. We explain them by invoking distinct scenarios for electric-field domain formation, validated by numerical simulations. Furthermore, we investigate the transient from an unstable to a stable point in the current-voltage characteristics after a steplike or ramplike increase of the external voltage.

© 2001 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevE.63.066207
DOI:
10.1103/PhysRevE.63.066207
PACS:
05.45.-a, 72.20.Ht