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Phys. Rev. E 63, 066132 (2001) [6 pages]

Competitive growth model involving random deposition and random deposition with surface relaxation

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Claudio M. Horowitz, Roberto A. Monetti, and Ezequiel V. Albano*
Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas (INIFTA), CONICET, UNLP, CIC, Sucursal 4, Casilla de Correo 16, (1900) La Plata, Argentina

Received 26 December 2000; published 29 May 2001

A deposition model that considers a mixture of random deposition with surface relaxation and a pure random deposition is proposed and studied. As the system evolves, random deposition with surface relaxation (pure random deposition) take place with probability p and (1-p), respectively. The discrete (microscopic) approach to the model is studied by means of extensive numerical simulations, while continuous equations are used in order to investigate the mesoscopic properties of the model. A dynamic scaling ansatz for the interface width W(L,t,p) as a function of the lattice side L, the time t and p is formulated and tested. Three exponents, which can be linked to the standard growth exponent of random deposition with surface relaxation by means of a scaling relation, are identified. In the continuous limit, the model can be well described by means of a phenomenological stochastic growth equation with a p-dependent effective surface tension.

© 2001 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevE.63.066132
DOI:
10.1103/PhysRevE.63.066132
PACS:
68.35.Ct, 05.40.-a, 02.50.-r, 81.15.Aa

*FAX: 0054-221-4254642. Email address: ealbano@inifta.unlp.edu.ar