Phys. Rev. E 63, 066132 (2001) [6 pages]Competitive growth model involving random deposition and random deposition with surface relaxationReceived 26 December 2000; published 29 May 2001 A deposition model that considers a mixture of random deposition with surface relaxation and a pure random deposition is proposed and studied. As the system evolves, random deposition with surface relaxation (pure random deposition) take place with probability p and (1-p), respectively. The discrete (microscopic) approach to the model is studied by means of extensive numerical simulations, while continuous equations are used in order to investigate the mesoscopic properties of the model. A dynamic scaling ansatz for the interface width W(L,t,p) as a function of the lattice side L, the time t and p is formulated and tested. Three exponents, which can be linked to the standard growth exponent of random deposition with surface relaxation by means of a scaling relation, are identified. In the continuous limit, the model can be well described by means of a phenomenological stochastic growth equation with a p-dependent effective surface tension. © 2001 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevE.63.066132
DOI:
10.1103/PhysRevE.63.066132
PACS:
68.35.Ct, 05.40.-a, 02.50.-r, 81.15.Aa
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