Phys. Rev. E 55, 1779–1782 (1997)Two-way silicon-neuron interface by electrical inductionReceived 19 September 1996; published in the issue dated February 1997 A nerve cell is placed onto a combined silicon microstructure of an insulated spot of doped silicon and an insulated-gate field-effect transistor. Voltage pulses are applied to the insulated spot. They elicit neural activity which in turn modulates the transistor. The bidirectional interface between the ionics of neurons and the electronics of silicon is based on electrical induction mediated by an electrochemically safe interface. © 1997 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevE.55.1779
DOI:
10.1103/PhysRevE.55.1779
PACS:
87.22.-q, 73.40.Mr, 87.80.+s
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