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APS » Journals » Phys. Rev. E » Volume 51 » Issue 2
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Phys. Rev. E 51, 1449–1452 (1995)

Experimental study of the response time of GaAs as a photoemitter

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A. V. Aleksandrov, M. S. Avilov, R. Calabrese, G. Ciullo, N. S. Dikansky, V. Guidi, G. Lamanna, P. Lenisa, P. V. Logachov, A. V. Novokhatsky, L. Tecchio, and B. Yang
Budker Institute for Nuclear Physics, Novosibirsk, Russia
Dipartimento di Fisica dell’Università and Istituto Nazionale di Fisica Nucleare, I-44100 Ferrara, Italy
Laboratori Nazionali di Legnaro, I-35020 Legnaro, Italy
Dipartimento di Fisica dell’Università di Bari and Istituto Nazionale di Fisica Nucleare, I-70125 Bari, Italy
Dipartimento di Fisica Sperimentale dell’Università and Istituto Nazionale di Fisica Nucleare, I-10125 Torino, Italy

Received 25 August 1994; published in the issue dated February 1995

An experimental investigation was carried out to measure the response time of GaAs in negative electron affinity conditions as a photoemitter. During the experiment, the photocathode was excited by a short-pulse (38 ps rms) frequency-doubled Nd:YLF laser. Results show that the rms response time of GaAs is shorter than 40 ps.

© 1995 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevE.51.1449
DOI:
10.1103/PhysRevE.51.1449
PACS:
29.25.Bx, 41.60.Cr
 
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